Medium energy ion scattering (MEIS) and low energy ion scattering (LEIS) are ion scattering techniques that share many similarities. Differences between the techniques arise due to the beam energies. MEIS, carried out at University of Huddersfield, was used to provide additional information on LEIS analysis carried out at University of Liverpool. Results from thin ZnO and HfO2 films grown by ALD are shown.
For ZnO films there is excellent agreement between LEIS sputter depth profiles and MEIS profiles. For HfO2 films the agreement between the two techniques is not good. Preferential sputtering causes difficulties in calibration of the LEIS sputter depth profiles.
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