The aim of this project is to locate and identify dopants in silicon, with an ultimate aim of being able to identify a single dopant, using a technique called Scanning Near-field Optical Microscopy (SNOM). SNOM can be used to map the dielectric properties of a sample surface at resolutions much higher than the wavelength of light used. We hope to detect the change in the dielectric function of a small (~10nm2) area of silicon when a dopant transitions from ground state to a higher state. In order to achieve this, a single sample with small implanted areas (~500nm2) of varying dopant density is required and we hope to manufacture such samples using the University of Surrey’s Ion Beam Centre’s single ion implantation tool, SIMPLE.
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