Generation of ion implanted reference wafers for Nanoelectrical AFM Characterisation

This presentation gives an overview of the work to develop a set of reference standards for electrical AFM measurements. AFM is a common tool used for device forensics and electrical characterisation techniques such as scanning spreading resistance microscopy (SSRM) allows dopant profiling of semiconductor devices and material structures. Developing a suitable reference standard will allow:

1.  An examination into sample preparation techniques for targeted AFM device analysis
2.  Provide not only qualitative but quantitative nanoelectrical AFM data for silicon and III-V material systems

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Collaborators: Peter Ward and Alan Blake (Tyndall National Institute)

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